Manufacturer Part Number
71V67703S75PFG
Manufacturer
Renesas Electronics America
Introduction
High-Speed 9Mbit Synchronous SRAM
Product Features and Performance
Synchronous Operation
SRAM - Synchronous, Single Data Rate (SDR)
High density 9Mbit memory capacity
Fast access time of 7.5 ns
Supports parallel interface
Product Advantages
Optimized for high-speed applications
Large memory organization 256K x 36 bits enhances storage efficiency
Low-voltage operation range helps to reduce power consumption
Key Technical Parameters
Memory Type: Volatile
Memory Size: 9Mbit
Memory Organization: 256K x 36
Clock Frequency: 117 MHz
Access Time: 7.5 ns
Voltage - Supply: 3.135V to 3.465V
Operating Temperature Range: 0°C to 70°C
Quality and Safety Features
Reliable surface-mount 100-LQFP package
Compliance with industrial quality and safety standards
Compatibility
Compatible with a wide range of microprocessors and DSPs with a parallel memory interface
Application Areas
High-speed computing
Networking and telecommunications
Embedded systems
Industrial controls
Product Lifecycle
Status: Last Time Buy
Note for potential discontinuation and options for future sourcing or alternative parts
Key Reasons to Choose This Product
Fast access time enables high-speed data retrieval
Synchronous interface provides improved data transfer rates
Large memory size suitable for complex applications
Stable supply voltage for consistent performance
Renesas Electronics America is a reputable manufacturer with a legacy in the semiconductor industry
Being a last time buy indicates the opportunity to stock up before discontinuation
Suitable for a variety of high-performance applications across multiple sectors