Manufacturer Part Number
70V27L20PFGI
Manufacturer
Renesas Electronics America
Introduction
The 70V27L20PFGI is a 512Kbit dual-port asynchronous SRAM (Static Random Access Memory) device from Renesas Electronics America. It features a 32K x 16 memory organization and a parallel memory interface, offering high-speed read and write access times of 20ns. This SRAM is designed for a wide range of applications that require high-speed, low-power data storage and retrieval.
Product Features and Performance
512Kbit memory capacity
32K x 16 memory organization
Dual-port, asynchronous SRAM technology
Parallel memory interface
20ns write cycle time and access time
3V to 3.6V supply voltage
Operating temperature range of -40°C to 85°C
Surface mount 100-LQFP package
Product Advantages
High-speed data access and processing
Low-power operation
Reliable and stable performance
Suitable for a variety of applications
Key Reasons to Choose This Product
Proven Renesas Electronics reliability and quality
Versatile dual-port SRAM design
Optimal performance for time-critical applications
Wide operating temperature range for demanding environments
Ease of integration with parallel interface systems
Quality and Safety Features
Robust design and manufacturing processes ensure long-term reliability
Compliance with industry standards and regulations
Compatibility
The 70V27L20PFGI is compatible with a wide range of electronic systems and devices that require high-speed, low-power data storage and retrieval.
Application Areas
Industrial automation and control systems
Telecommunications equipment
Computer and networking devices
Embedded systems and IoT applications
Medical and healthcare equipment
Military and aerospace applications
Product Lifecycle
The 70V27L20PFGI is an active and currently available product. There are no announced plans for discontinuation or end-of-life at this time. Customers are advised to contact our website's sales team for the latest information on product availability and any potential equivalent or alternative models.