Manufacturer Part Number
HUF75339P3
Manufacturer
Harris Corporation
Introduction
High-performance N-channel MOSFET with ultra-low on-resistance
Product Features and Performance
Extremely low on-resistance
High current capability up to 75A
Wide operating temperature range of -55°C to 175°C
High power dissipation of 200W
Product Advantages
Excellent efficiency due to low on-resistance
Reliable operation over a wide temperature range
Capable of handling high power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 55V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 12mΩ @ 75A, 10V
Continuous Drain Current (Id): 75A @ 25°C
Input Capacitance (Ciss): 2000pF @ 25V
Power Dissipation (Tc): 200W
Quality and Safety Features
MOSFET technology for reliable performance
RoHS non-compliant
Compatibility
Through-hole mounting in TO-220-3 package
Application Areas
High-power switch mode power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available
Key Reasons to Choose
Ultra-low on-resistance for high efficiency
High current and power handling capability
Wide operating temperature range
Reliable MOSFET technology