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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleHUF75307D3ST
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HUF75307D3ST - Harris Corporation

Manufacturer Part Number
HUF75307D3ST
Manufacturer
Harris Corporation
Allelco Part Number
32D-HUF75307D3ST
ECAD Model
Parts Description
MOSFET N-CH 55V 15A TO252
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Data sheet
HUF75307D3ST.pdf
RoHs Status
ROHS3 Compliant
Our certification
In stock: 128660

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Specifications

HUF75307D3ST Tech Specifications
Harris Corporation - HUF75307D3ST technical specifications, attributes, parameters and parts with similar specifications to Harris Corporation - HUF75307D3ST

Product Attribute Attribute Value  
Manufacturer Harris Corporation  
Vgs(th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package TO-252, (D-Pak)  
Series UltraFET™  
Rds On (Max) @ Id, Vgs 90mOhm @ 13A, 10V  
Power Dissipation (Max) 45W (Tc)  
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63  
Product Attribute Attribute Value  
Package Bulk  
Operating Temperature -55°C ~ 175°C (TJ)  
Mounting Type Surface Mount  
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V  
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 20 V  
FET Type N-Channel  
FET Feature -  
Drain to Source Voltage (Vdss) 55 V  
Current - Continuous Drain (Id) @ 25°C 15A (Tc)  

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL)
REACH Status
ECCN EAR99
HTSUS

Parts Introduction

Manufacturer Part Number

HUF75307D3ST

Manufacturer

Harris Corporation

Introduction

The HUF75307D3ST is a N-channel MOSFET transistor from the UltraFET series, designed for a wide range of power management and control applications.

Product Features and Performance

Operating temperature range: -55°C to 175°C

Drain-to-Source Voltage (Vdss): 55V

Gate-to-Source Voltage (Vgs): ±20V

On-State Resistance (Rds(on)): 90mΩ @ 13A, 10V

Continuous Drain Current (Id): 15A @ 25°C

Input Capacitance (Ciss): 250pF @ 25V

Power Dissipation: 45W @ Tc

Product Advantages

Low on-state resistance for high efficiency

Wide operating temperature range

Robust design for reliable performance

Surface mount package for easy assembly

Key Technical Parameters

MOSFET Technology: N-Channel

Threshold Voltage (Vgs(th)): 4V @ 250A

Gate Charge (Qg): 20nC @ 20V

Quality and Safety Features

RoHS3 Compliant

TO-252 (D-Pak) package

Compatibility

Surface mount package

Application Areas

Power management and control circuits

Motor drives

Power supplies

Industrial automation

Product Lifecycle

Current product offering, no discontinuation plans

Key Reasons to Choose

Excellent performance-to-cost ratio

Wide operating temperature range

Reliable and robust design

Easy to integrate into power management systems

Parts with Similar Specifications

The three parts on the right have similar specifications to Harris Corporation HUF75307D3ST

Product Attribute HUF75307D3ST HUF75229P3 HUF75229P3 HUF75309D3
Part Number HUF75307D3ST HUF75229P3 HUF75229P3 HUF75309D3
Manufacturer Harris Corporation onsemi Fairchild Semiconductor Harris Corporation
Mounting Type Surface Mount Through Hole Through Hole Through Hole
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 20 V 75 nC @ 20 V 75 nC @ 20 V 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V 1060 pF @ 25 V 1060 pF @ 25 V 350 pF @ 25 V
Supplier Device Package TO-252, (D-Pak) TO-220-3 TO-220-3 I-PAK
FET Feature - - - -
Drain to Source Voltage (Vdss) 55 V 50 V 50 V 55 V
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-220-3 TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Package Bulk Tube Tube Bulk
Series UltraFET™ UltraFET™ UltraFET™ -
Rds On (Max) @ Id, Vgs 90mOhm @ 13A, 10V 22mOhm @ 44A, 10V 22mOhm @ 44A, 10V 70mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 44A (Tc) 44A (Tc) 17A (Tc)
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Vgs (Max) ±20V ±20V ±20V ±20V
Power Dissipation (Max) 45W (Tc) 90W (Tc) 90W (Tc) 45W (Tc)
FET Type N-Channel N-Channel N-Channel N-Channel

Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Your Faithful Supply Chain Partner -

Contact us if you have any questions.

  1. Phone
    +00852 9146 4856

Certifications & Memberships

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HUF75307D3ST

Harris Corporation
32D-HUF75307D3ST

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