GD25S512MDYIGR - GigaDevice Semiconductor (HK) Limited

Manufacturer Part Number

GD25S512MDYIGR

Manufacturer

gigadevice

Introduction

The GD25S512MDYIGR is a high-performance flash memory chip with a capacity of 512 Mbit, utilizing FLASH-NOR technology with a 64M x 8 memory organization.

Product Features and Performance

FLASH-NOR Technology

512 Mbit Memory Size

64M x 8 Memory Organization

SPI Quad I/O Interface

104 MHz Clock Frequency

Write Cycle Time: 50µs (Word), 2.4ms (Page)

Product Advantages

High speed operation

Robust memory interface option with Quad I/O

Good range of operating temperatures from -40°C to 85°C

Key Technical Parameters

Memory Type: Non-Volatile

Memory Format: FLASH

Voltage Supply: 2.7V to 3.6V

Operating Temperature Range: -40°C to 85°C

Mounting Type: Surface Mount

Package/Case: 8-WDFN Exposed Pad

Supplier Device Package: 8-WSON (6x8)

Quality and Safety Features

Stable performance across varying temperatures and voltages

Reliable data retention and endurance

Compatibility

Compatible with systems needing high-speed flash memory with SPI Quad I/O interface

Application Areas

Consumer Electronics

Telecommunication Devices

Automotive Applications

Industrial Automation

Product Lifecycle

Currently in active status

Not nearing discontinuation

Upgrades and replacements readily available

Several Key Reasons to Choose This Product

Provides a large memory size of 512Mbit for extensive data storage

Fast access times with a high clock frequency of 104 MHz

Wide operating voltage and temperature ranges provide flexibility in usage

Enhanced data transmission with SPI Quad I/O interface

Robust compact package suitable for varied mounting needs