Manufacturer Part Number
PMBFJ177,215
Manufacturer
NXP Semiconductors
Introduction
The PMBFJ177,215 is a P-channel Junction Field-Effect Transistor (JFET) designed for a variety of general-purpose analog and switching applications. This JFET offers a breakdown voltage of 30V and a drain-to-source current rating of 1.5mA at 15V, making it suitable for use in low-power circuits and battery-operated devices.
Product Features and Performance
P-channel JFET with a breakdown voltage of 30V
Drain-to-source current rating of 1.5mA at 15V
Low input capacitance of 8pF at 10V (VGS)
On-resistance (RDS(on)) of 300 ohms
Maximum power dissipation of 300mW
Operating temperature range of -55°C to +150°C
Product Advantages
Reliable and robust design suitable for a variety of applications
Low power consumption and high efficiency
Compact surface-mount package for efficient board layout
Key Reasons to Choose This Product
Versatile performance characteristics for analog and switching applications
Proven reliability and long-term durability
Cost-effective solution for low-power circuit designs
Quality and Safety Features
Manufactured using high-quality materials and processes to ensure reliable performance
Meets industry standards for safety and environmental compliance
Compatibility
The PMBFJ177,215 is a direct replacement for the PMBFJ1 base product number.
Application Areas
Analog and switching circuits
Battery-powered devices
Low-power electronics
Product Lifecycle
The PMBFJ177,215 is an obsolete product, meaning it is no longer in active production. However, there may be equivalent or alternative models available from NXP Semiconductors or other manufacturers. Customers are advised to contact our website's sales team for more information on current product options and availability.