Manufacturer Part Number
PMR280UN,115
Manufacturer
NXP Semiconductors
Introduction
N-Channel TrenchMOS FET with low on-resistance and high efficiency suitable for power management applications.
Product Features and Performance
Low on-resistance (340 mΩ) for high efficiency
High current capability (980 mA) for power handling
Fast switching for high-frequency operation
Low gate charge (0.89 nC) for efficient drive
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power efficiency
High power density
Reliable operation in harsh environments
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Gate-to-Source Voltage (Vgs): ±8 V
On-Resistance (Rds(on)): 340 mΩ
Continuous Drain Current (Id): 980 mA
Input Capacitance (Ciss): 45 pF
Power Dissipation (Pd): 530 mW
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Can be used in a wide range of power management applications
Application Areas
Switch-mode power supplies
Motor drives
Battery chargers
Lighting ballasts
General-purpose power switching
Product Lifecycle
This product is currently in production and available for purchase.
No plans for discontinuation in the near future.
Replacement or upgrade options may be available from NXP Semiconductors.
Reasons to Choose This Product
Excellent power efficiency and high power density
Reliable operation in harsh environments
Suitable for high-frequency switching applications
Low on-resistance and high current capability
Fast switching and low gate charge for efficient drive
Wide operating temperature range