Manufacturer Part Number
PBSS5350T,215
Manufacturer
NXP Semiconductors
Introduction
PNP transistor in a small surface-mount package
Product Features and Performance
Operating temperature up to 150°C
Power rating up to 300 mW
Collector-emitter breakdown voltage up to 50 V
Collector current up to 2 A
Collector cutoff current up to 100 nA
Low collector-emitter saturation voltage of 390 mV at 300 mA, 3 A
DC current gain of at least 200 at 1 A, 2 V
Transition frequency of 100 MHz
Product Advantages
Compact surface-mount package
High power and current handling capability
Low saturation voltage for efficient power switching
High current gain and high-frequency performance
Key Technical Parameters
Package: SOT-23
Mounting type: Surface mount
Operating temperature: up to 150°C
Power rating: up to 300 mW
Collector-emitter breakdown voltage: up to 50 V
Collector current: up to 2 A
Collector cutoff current: up to 100 nA
Collector-emitter saturation voltage: 390 mV at 300 mA, 3 A
DC current gain: at least 200 at 1 A, 2 V
Transition frequency: 100 MHz
Quality and Safety Features
RoHS3 compliant
Compatibility
This PNP transistor can be used in a wide range of electronic circuits and applications.
Application Areas
Power amplifiers
Switching circuits
Relay and motor driving
General-purpose amplification and switching
Product Lifecycle
This product is currently in production and available. There are no plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
High power and current handling capability for efficient power switching
Low saturation voltage for minimal power loss
High current gain and high-frequency performance for improved circuit performance
Compact surface-mount package for space-constrained designs
RoHS3 compliance for use in environmentally-friendly applications
PBSS5350SSFreescale / NXP Semiconductors