Manufacturer Part Number
MW7IC18100NBR1
Manufacturer
NXP Semiconductors
Introduction
High power RF amplifier integrated circuit for GSM/EDGE applications
Product Features and Performance
Frequency range: 1.805GHz to 2.05GHz
Gain: 30dB
Test Frequency: 1.9GHz
Supply Current: 1.18A
Supply Voltage: 24V to 32V
P1dB: 51.93dBm
Product Advantages
High power handling capability
Efficient performance for GSM and EDGE applications
Robust and reliable design
Key Technical Parameters
Frequency range: 1.805GHz to 2.05GHz
Gain: 30dB
Supply Current: 1.18A
Supply Voltage: 24V to 32V
P1dB: 51.93dBm
Quality and Safety Features
ROHS3 compliant
Suitable for Tape & Reel (TR) packaging
Compatibility
RF Type: GSM, EDGE
Mounting Type: Chassis Mount
Package: TO-272-14 Variant, Flat Leads
Application Areas
GSM and EDGE base station amplifiers
Wireless infrastructure equipment
High power RF amplifier applications
Product Lifecycle
Current production part
No discontinuation or replacement plans announced
Several Key Reasons to Choose This Product
High power handling capability for efficient GSM/EDGE performance
Robust and reliable design for demanding applications
Compatibility with common packaging and mounting types
ROHS3 compliance for environmental responsibility