Manufacturer Part Number
MRF7S21170HSR3
Manufacturer
NXP Semiconductors
Introduction
This product is a high-power RF MOSFET transistor designed for use in a variety of RF power amplifier applications, including base stations, repeaters, and other high-power wireless communication systems.
Product Features and Performance
50W output power
4A test current
65V rated voltage
16dB gain
28V test voltage
17GHz operating frequency
Surface mount packaging
Product Advantages
Efficient and high-performance RF power amplification
Suitable for a wide range of wireless communication applications
Robust and reliable design
Key Technical Parameters
LDMOS technology
NI-880S package
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with a variety of RF power amplifier designs and applications
Application Areas
Base stations
Repeaters
Wireless communication systems
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
High output power and efficiency for RF power amplification
Reliable and robust design suitable for demanding wireless applications
Compatibility with a wide range of RF power amplifier designs
RoHS3 compliance for environmental and safety considerations
MRF7S21170HR3NXP USA Inc.FET RF 65V 2.17GHZ NI-880