Manufacturer Part Number
MRF6S9060NBR1
Manufacturer
NXP Semiconductors
Introduction
High-performance LDMOS RF power transistor
Product Features and Performance
Excellent power output of 14W
High efficiency of 21.4dB gain
Operates at 880MHz frequency
Supports a rated voltage of 68V and a test voltage of 28V
Capable of handling a test current of 450mA
Product Advantages
Suitable for chassis mount applications
Compliant with RoHS3 regulations
Key Technical Parameters
LDMOS technology
TO-272BC package
TO-272-2 supplier device package
Tape & Reel (TR) packaging
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with various RF power amplifier applications
Application Areas
Suitable for use in RF power amplifier circuits, especially in the 880MHz frequency range
Product Lifecycle
Currently in production, no plans for discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
Excellent power output and efficiency
Operates at the desired 880MHz frequency
Supports high voltage and current ratings
Compact and compatible chassis mount design
Compliant with the latest RoHS regulations
