MRF282ZR1 - NXP USA Inc.

Manufacturer Part Number

MRF282ZR1

Manufacturer

NXP Semiconductors

Introduction

High-performance RF MOSFET transistor designed for use in 2 GHz wireless infrastructure applications.

Product Features and Performance

Optimized for 2 GHz wireless infrastructure applications

10W output power

5 dB gain

65 V rated voltage

75 mA test current

26 V test voltage

LDMOS technology

Product Advantages

Reliable and efficient performance

Suitable for high-frequency, high-power applications

Robust and durable design

Key Technical Parameters

Frequency: 2 GHz

Power Output: 10W

Gain: 11.5 dB

Voltage Rating: 65 V

Test Current: 75 mA

Test Voltage: 26 V

Quality and Safety Features

RoHS3 compliant

Suitable for chassis mount applications

Compatibility

Designed for use in 2 GHz wireless infrastructure applications

Application Areas

Wireless infrastructure equipment

2 GHz RF power amplifier circuits

Product Lifecycle

Current production model

Replacement and upgrade options available

Key Reasons to Choose This Product

Optimized for 2 GHz wireless infrastructure applications

High output power and gain

Reliable and durable LDMOS technology

RoHS3 compliance for environmental safety

Suitable for chassis mount applications