MR2A16ATS35C - NXP USA Inc.

Manufacturer Part Number

MR2A16ATS35C

Manufacturer

NXP Semiconductors

Introduction

The NXP MR2A16ATS35C is a high-performance 4Mbit Magnetoresistive RAM (MRAM) device with a parallel interface. It offers non-volatile memory storage with fast read and write access speeds, making it suitable for a wide range of applications that require reliable and high-speed data storage.

Product Features and Performance

4Mbit memory capacity

256K x 16 memory organization

Parallel memory interface

35ns write cycle time (word, page)

35ns access time

3V to 3.6V operating voltage

0°C to 70°C operating temperature range

Surface mount package (44-TSOP, 10.16mm width)

Product Advantages

Non-volatile memory with unlimited read/write cycles

Fast read and write access speeds

Low power consumption

Robust and reliable data storage

Suitable for a wide range of applications

Key Reasons to Choose This Product

Exceptional performance and reliability for demanding applications

Seamless integration into systems requiring high-speed data storage

Cost-effective solution for non-volatile memory requirements

Trusted NXP Semiconductors technology and support

Quality and Safety Features

Rigorous quality control and testing procedures

Compliance with industry standards and safety regulations

Compatibility

The MR2A16ATS35C is designed to be compatible with various embedded systems and applications that require high-speed, non-volatile memory storage.

Application Areas

Industrial automation and control systems

Automotive electronics

Aerospace and defense systems

Medical devices

Telecommunications equipment

Consumer electronics

Product Lifecycle

The MR2A16ATS35C is an obsolete product, meaning it is no longer in active production. However, NXP Semiconductors may have alternative or equivalent models available. Customers are advised to contact our website's sales team for more information on available options and product life cycle support.