MMZ25332BT1 - NXP USA Inc.

Manufacturer Part Number

MMZ25332BT1

Manufacturer

NXP Semiconductors

Introduction

High-performance RF power amplifier for 3G/4G LTE cellular applications

Product Features and Performance

Frequency range: 1.8GHz to 2.8GHz

Gain: 26.5dB

Noise Figure: 5.8dB

Supply Voltage: 3V to 5V

Output Power (P1dB): 33dBm

Suitable for LTE, TDS-CDMA, and W-CDMA RF types

Product Advantages

Optimized for 3G/4G LTE cellular applications

Excellent gain and noise figure performance

Compact 12-QFN (3x3) package

Key Technical Parameters

Frequency: 1.8GHz to 2.8GHz

Gain: 26.5dB

Noise Figure: 5.8dB

Supply Voltage: 3V to 5V

Output Power (P1dB): 33dBm

Quality and Safety Features

RoHS3 compliant

12-QFN (3x3) package

Compatibility

Suitable for 3G/4G LTE, TDS-CDMA, and W-CDMA applications

Application Areas

3G/4G LTE cellular base stations and user equipment

Wireless infrastructure equipment

Cellular repeaters and boosters

Product Lifecycle

Current product, no discontinuation planned

Replacement or upgrade options available from NXP Semiconductors

Several Key Reasons to Choose This Product

Optimized for 3G/4G LTE cellular applications

Excellent RF performance with high gain and low noise figure

Compact and efficient 12-QFN (3x3) package

RoHS3 compliant for environmental compliance

Suitable for a wide range of cellular wireless applications