Manufacturer Part Number
MC33883HEGR2
Manufacturer
NXP Semiconductors
Introduction
High-efficiency 4-channel gate driver IC for driving N-channel MOSFETs in half-bridge configurations
Product Features and Performance
4 independent half-bridge gate driver channels
Wide supply voltage range: 5.5V to 28V
Peak output current: 1A source/sink
Fast rise/fall times: 80ns typical
Undervoltage lockout, thermal shutdown, and cross-conduction protection
Supports bootstrap high-side drive up to 55V
Integrated high-side charge pump
Product Advantages
High efficiency operation
Compact 20-SOIC package
Protection features for reliable operation
Suitable for a wide range of power conversion applications
Key Technical Parameters
Supply voltage range: 5.5V to 28V
Output peak current: 1A source/sink
Rise/fall time: 80ns typical
High-side voltage max: 55V
Operating temperature range: -40°C to 150°C
Quality and Safety Features
RoHS3 compliant
Thermal shutdown protection
Undervoltage lockout
Cross-conduction protection
Compatibility
Suitable for driving N-channel MOSFETs in half-bridge configurations
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation
Electric vehicles
Renewable energy systems
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
High efficiency and performance for driving N-channel MOSFETs
Robust protection features for reliable operation
Wide supply voltage and temperature range
Compact 20-SOIC package for space-constrained designs
Suitable for a variety of power conversion applications