Manufacturer Part Number
BUK9K134-100EX
Manufacturer
NXP Semiconductors
Introduction
High-performance N-Channel MOSFET with low on-resistance
Product Features and Performance
Dual N-Channel MOSFET in a space-saving LFPAK56D package
Low on-resistance of 159mOhm @ 5A, 5V
High voltage rating of 100V drain-to-source
Continuous drain current of 8.5A at 25°C
Low input capacitance of 755pF @ 25V
Logic-level gate with a threshold voltage of 2.1V @ 1mA
Low gate charge of 7.4nC @ 5V
Product Advantages
Efficient power conversion with low conduction losses
Compact and space-saving design
Suitable for high-voltage, high-current applications
Easy to drive with logic-level gate
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
On-Resistance (Rds(on)): 159mOhm @ 5A, 5V
Continuous Drain Current (Id): 8.5A @ 25°C
Input Capacitance (Ciss): 755pF @ 25V
Gate Threshold Voltage (Vgs(th)): 2.1V @ 1mA
Gate Charge (Qg): 7.4nC @ 5V
Quality and Safety Features
AEC-Q101 qualified
RoHS compliant
ESD protection
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and there are no plans for discontinuation.
Replacement or upgrade options may be available, depending on the specific application requirements.
Key Reasons to Choose This Product
Excellent efficiency and power handling capabilities
Compact and space-saving package
Ease of use with logic-level gate
Proven reliability and quality
Suitability for a wide range of high-voltage, high-current applications
BUK9K134-100EFreescale / NXP Semiconductors
BUK9E08-55BLUMILEDS