Manufacturer Part Number
BUK7Y9R9-80EX
Manufacturer
NXP Semiconductors
Introduction
High-performance N-channel TrenchMOS power MOSFETs in LFPAK56 and Power-SO8 packages.
Product Features and Performance
Extremely low on-resistance
Fast switching speed
High current capability
Excellent avalanche capability
Rugged and reliable design
Product Advantages
Optimized for high-frequency, high-efficiency power conversion applications
Improved thermal performance
Reduced conduction and switching losses
Key Technical Parameters
Drain to Source Voltage (Vdss): 80V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 98mΩ @ 5A, 10V
Continuous Drain Current (Id): 89A @ 25°C
Input Capacitance (Ciss): 498pF @ 25V
Power Dissipation (Tc): 195W
Quality and Safety Features
Robust design for high reliability
Compliant with relevant safety standards
Compatibility
Compatible with a wide range of high-frequency, high-efficiency power conversion applications.
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Battery management systems
Product Lifecycle
Currently in active production. No plans for discontinuation.
Key Reasons to Choose This Product
Excellent performance and efficiency
High reliability and ruggedness
Broad compatibility and versatility
Optimized for high-frequency, high-power applications
Available in industry-standard packages for easy integration
BUK866-400IZLUMILEDS