Manufacturer Part Number
BUK7K35-60EX
Manufacturer
NXP Semiconductors
Introduction
High-performance N-channel MOSFET in an LFPAK56D package for power management applications.
Product Features and Performance
Dual N-channel MOSFET in a compact LFPAK56D package
High power density and efficiency
Low on-resistance for reduced conduction losses
Fast switching for improved system efficiency
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent thermal performance and power handling
Small footprint for space-constrained designs
Reliable and robust construction
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 30mΩ @ 5A, 10V
Continuous Drain Current (Id): 20.7A @ 25°C
Input Capacitance (Ciss): 794pF @ 25V
Threshold Voltage (Vgs(th)): 4V @ 1mA
Gate Charge (Qg): 12.5nC @ 10V
Quality and Safety Features
Designed and manufactured to high quality and reliability standards
RoHS and REACH compliant
Compatibility
Suitable for a wide range of power management applications
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Industrial and consumer electronics
Product Lifecycle
Still in active production, with no plans for discontinuation
Replacement and upgrade options available if required
Several Key Reasons to Choose This Product
Excellent power density and efficiency
Compact LFPAK56D package for space-constrained designs
Reliable and robust performance across a wide temperature range
Easy integration and compatibility with various power management applications
Availability of replacement and upgrade options for long-term support
BUK7K18-40EFreescale / NXP Semiconductors