Manufacturer Part Number
BFU730LXZ
Manufacturer
NXP Semiconductors
Introduction
High frequency NPN bipolar transistor for wireless communication applications
Product Features and Performance
High frequency operation up to 53GHz transition frequency
High gain of 15.8dB
Low noise figure of 0.75dB at 6GHz
High collector current capability up to 30mA
Small DFN1006C-3 package for compact design
Product Advantages
Optimized for RF and microwave applications
Supports high-speed wireless communication
Compact surface mount package for space-constrained designs
Excellent high frequency performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 3V
Collector Current (max): 30mA
DC Current Gain (min): 205 @ 2mA, 3V
Transition Frequency: 53GHz
Gain: 15.8dB
Noise Figure: 0.75dB @ 6GHz
Quality and Safety Features
RoHS3 compliant
Reliable performance in various operating conditions
Compatibility
Compatible with common surface mount assembly processes
Application Areas
Wireless communication systems
RF and microwave amplifiers
Oscillators
Mixers
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement and upgrade options available from NXP
Key Reasons to Choose
Excellent high frequency performance for wireless applications
Compact surface mount packaging for space-constrained designs
Reliable and RoHS compliant
Support from a trusted semiconductor manufacturer, NXP
