Manufacturer Part Number
BFR540,215
Manufacturer
NXP Semiconductors
Introduction
The BFR540,215 is a high-frequency, low-noise NPN bipolar junction transistor (BJT) designed for use in radio frequency (RF) and wireless communication applications.
Product Features and Performance
High-frequency operation up to 9GHz
Low noise figure of 1.3dB to 2.4dB at 900MHz
High current gain (hFE) of 100 at 40mA, 8V
500mW maximum power dissipation
15V maximum collector-emitter breakdown voltage
Product Advantages
Excellent high-frequency performance
Low noise for improved signal quality
High current gain for efficient amplification
Compact surface mount packaging
Key Technical Parameters
Transistor Type: NPN
Frequency Transition (fT): 9GHz
Noise Figure: 1.3dB ~ 2.4dB @ 900MHz
DC Current Gain (hFE): 100 @ 40mA, 8V
Maximum Collector Current (IC): 120mA
Maximum Collector-Emitter Voltage (VCEO): 15V
Maximum Power Dissipation: 500mW
Operating Temperature Range: -55°C to +175°C
Quality and Safety Features
RoHS3 compliant
Compact and reliable SOT-23 (TO-236AB) package
Compatibility
Suitable for surface mount applications
Application Areas
RF and wireless communication circuits
Amplifier and mixer circuits
Oscillator and VCO circuits
Broadband and high-frequency applications
Product Lifecycle
The BFR540,215 is an active and commonly used product in the NXP Semiconductors portfolio.
Replacements or upgrades may be available in the future, but the product is not currently nearing discontinuation.
Key Reasons to Choose This Product
Excellent high-frequency performance up to 9GHz
Low noise figure for improved signal quality
High current gain for efficient amplification
Compact and reliable surface mount packaging
RoHS3 compliance for environmental responsibility
Widely used and supported product from a reputable manufacturer
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