BCX56-16115 - NXP USA Inc.

Manufacturer Part Number

BCX56-16115

Manufacturer

NXP Semiconductors

Introduction

This is a high-performance NPN bipolar junction transistor (BJT) from NXP Semiconductors. It is designed for a wide range of general-purpose switching and amplifier applications.

Product Features and Performance

High current handling capability up to 1A

Low collector-emitter saturation voltage

High gain-bandwidth product of 180MHz

Suitable for high-speed, high-power switching applications

Good thermal stability and ruggedness

Product Advantages

Compact surface-mount SOT-89 package

RoHS-3 compliant for environmentally friendly use

Reliable and robust performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 80V

Collector Current (IC): 1A

Power Dissipation: 500mW

Transition Frequency (fT): 180MHz

DC Current Gain (hFE): Minimum 100 @ 150mA, 2V

Quality and Safety Features

Compliant with RoHS-3 directive

Reliable and durable performance under high temperature and power conditions

Compatibility

This transistor is compatible with a wide range of electronic circuits and applications where high-performance, high-power BJT transistors are required.

Application Areas

Switching power supplies

Audio amplifiers

Relay drivers

Motor control circuits

General-purpose amplifier and switch circuits

Product Lifecycle

This product is currently in active production and is not nearing discontinuation. Replacement or upgraded models may be available in the future.

Key Reasons to Choose This Product

High-performance, high-power handling capability

Compact surface-mount package for efficient board space utilization

Reliable and robust design for demanding applications

RoHS-3 compliance for environmentally friendly use

Broad compatibility and suitability for a wide range of applications