BC857B,215 - NXP USA Inc.

Manufacturer Part Number

BC857B,215

Manufacturer

NXP Semiconductors

Introduction

Bipolar junction transistor (BJT) single transistor

Product Features and Performance

High frequency performance, Ft up to 100 MHz

Low collector-emitter saturation voltage

Low collector-emitter cutoff current

Wide collector-emitter breakdown voltage range

AEC-Q101 qualified for automotive applications

Product Advantages

Suitable for high-frequency analog and switching applications

Compact surface-mount package

Good thermal performance

Key Technical Parameters

Operating temperature range: -55°C to +150°C

Maximum power dissipation: 250 mW

Collector-emitter breakdown voltage: 45 V

Collector current (max): 100 mA

DC current gain (hFE): 220 (min) at 2 mA, 5 V

Quality and Safety Features

AEC-Q101 qualified for automotive applications

RoHS compliant

Compatibility

Suitable for surface mount applications

Compatible with standard SMD assembly processes

Application Areas

High-frequency analog circuits

Switching circuits

Automotive electronics

Industrial electronics

Product Lifecycle

This is an active and widely used product

Replacements and upgrades are readily available

Key Reasons to Choose This Product

High-frequency performance up to 100 MHz

Low saturation voltage and cutoff current

Wide operating voltage and current range

AEC-Q101 qualification for automotive use

Compact surface-mount package with good thermal performance