Manufacturer Part Number
BAP51-05W
Manufacturer
NXP Semiconductors
Introduction
BAP51-05W is a diode designed for RF signal switching applications.
Product Features and Performance
Diode Type: PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 50V
Current - Max: 50 mA
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Power Dissipation (Max): 240 mW
Operating Temperature Range: -65°C to +150°C
Product Advantages
High-frequency operation capability
Low capacitance for faster switching speeds
Low resistance at high frequencies
Robust against high reverse voltages
Key Technical Parameters
50V Maximum Peak Reverse Voltage
50 mA Maximum Current
35pF Capacitance at 5V, 1MHz
5Ohm Resistance at 10mA, 100MHz
240 mW Power Dissipation
Operating Temperature: -65°C to +150°C
Quality and Safety Features
Designed to withstand temperatures ranging from -65°C to +150°C for reliable performance in extreme conditions
Compatibility
Packaged in SC-70, SOT-323 for compatibility with surface mount technology
Application Areas
RF switch circuits
High-frequency RF signal processing
Telecommunications equipment
Product Lifecycle
Status: Obsolete
Contains information including ongoing availability or potential replacement options
Reasons to Choose This Product
Superior switching performance for RF applications
High-reliability diode with low internal resistance
Stable operation over a wide temperature range
Compatible with modern SMT assembly processes
A suitable choice for legacy equipment maintenance due to obsolescence
BAP51-01LUMILEDS