Manufacturer Part Number
SSS10N60B
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-efficiency N-channel power MOSFET
Product Features and Performance
High voltage rating up to 600V
Low on-resistance down to 800mΩ
High continuous drain current up to 9A
Fast switching speed
Low gate charge of 70nC
Suitable for high-frequency, high-efficiency power conversion applications
Product Advantages
Excellent trade-off between on-resistance and gate charge
Reliable performance in high-voltage, high-current applications
Efficient power conversion with low switching and conduction losses
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 800mΩ @ 4.5A, 10V
Continuous Drain Current (Id): 9A @ 25°C
Input Capacitance (Ciss): 2700pF @ 25V
Power Dissipation (Tc): 50W
Quality and Safety Features
RoHS3 compliant
Reliable performance under wide operating temperature range (-55°C to 150°C)
Compatibility
Through-hole mounting (TO-220-3 package)
Suitable for various high-voltage, high-current power conversion applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely available MOSFET from Fairchild (onsemi).
Replacement or upgraded models may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent trade-off between on-resistance and gate charge for efficient power conversion
Reliable high-voltage, high-current performance
Suitable for a wide range of high-power, high-frequency applications
RoHS3 compliance for environmentally-friendly applications
Readily available and widely used in the industry
