Manufacturer Part Number
MPSA06RA
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
TO-92-3 package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature: -55°C to 150°C
Power Rating: 625 mW
Collector-Emitter Breakdown Voltage (Max): 80 V
Collector Current (Max): 500 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage (Max): 250 mV @ 10 mA, 100 mA
Transistor Type: NPN
DC Current Gain (hFE) (Min): 100 @ 100 mA, 1 V
Transition Frequency: 100 MHz
Product Advantages
Rugged and reliable performance
Compact and space-efficient package
Wide operating temperature range
Suitable for high current and high voltage applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage
Collector Current
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Quality and Safety Features
Complies with industry standards
Robust design for reliable operation
Compatibility
Through-hole mounting
Application Areas
Amplifiers
Switches
Drivers
Power supplies
General-purpose electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Reliable and robust performance
Wide operating temperature range
Suitable for high current and high voltage applications
Compact and space-efficient package
Compatibility with through-hole mounting
MPSA06RAonsemiTRANS NPN 80V 0.5A TO92-3