Manufacturer Part Number
KSH112TM
Manufacturer
Fairchild (onsemi)
Introduction
High power Darlington transistor
Product Features and Performance
High current capability up to 2A
High DC current gain of 1000 at 2A, 3V
Wide collector-emitter breakdown voltage of 100V
Low collector-emitter saturation voltage of 3V at 40mA, 4A
Wide operating temperature range up to 150°C
High frequency transition of 25MHz
Product Advantages
Excellent power handling capability
High current gain for efficient power amplification
Wide voltage and temperature operating range
Low saturation voltage for high efficiency
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 100V
Collector Current (Max): 2A
Collector Cutoff Current (Max): 20A
DC Current Gain (Min): 1000 @ 2A, 3V
Transition Frequency: 25MHz
Power Dissipation (Max): 1.75W
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
D-Pak package for reliable surface mount assembly
Compatibility
Surface mount TO-252-3 (D-Pak) package
Application Areas
Power amplifiers
Motor drivers
Switch mode power supplies
Industrial controls
Product Lifecycle
Current production model
Replacement/upgrade options available
Key Reasons to Choose
High power handling and efficiency
Excellent current gain for low-power drive
Wide operating voltage and temperature range
Compact surface mount package
KSH122ITUonsemiTRANS NPN DARL 100V 8A IPAK