Manufacturer Part Number
KSE13007FH2SMTU
Manufacturer
Fairchild (onsemi)
Introduction
This product is a discrete semiconductor device in the form of a bipolar junction transistor (BJT) from Fairchild (onsemi).
Product Features and Performance
NPN transistor type
High DC current gain (hFE) of at least 8 at 2A collector current and 5V collector-emitter voltage
Transition frequency of 4MHz
Maximum collector-emitter saturation voltage of 3V at 2A collector current and 2A base current
Maximum collector current rating of 8A
Operating temperature range up to 150°C
Product Advantages
Robust and reliable performance
Suitable for high current switching and amplification applications
Compact TO-220 package for efficient heat dissipation
Key Technical Parameters
Collector-Emitter Voltage (VCEO): N/A
Collector Current (IC): 8A
DC Current Gain (hFE): Min. 8 @ 2A, 5V
Transition Frequency (fT): 4MHz
Collector-Emitter Saturation Voltage (VCE(sat)): Max. 3V @ 2A, 2A
Quality and Safety Features
Compliant with RoHS requirements (status not specified)
TO-220 package for secure mounting and heat dissipation
Compatibility
Through-hole mounting
Application Areas
High current switching and amplification circuits
Power electronics and motor control applications
Product Lifecycle
Current production status unknown
Replacement or upgrade options may be available, but not specified
Key Reasons to Choose This Product
Robust and reliable performance
Suitable for high current applications
Compact and efficient package design
Meets key technical requirements for the application
