Manufacturer Part Number
KSD362RTU
Manufacturer
Fairchild (onsemi)
Introduction
High-power, high-voltage NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
Capable of handling up to 40W of power
Withstands up to 70V collector-emitter voltage
Supports up to 5A of collector current
Transition frequency of 10MHz
DC current gain of at least 40 at 5A collector current and 5V collector-emitter voltage
Product Advantages
High power and voltage handling capability
High current capacity
Suitable for high-frequency applications
Key Technical Parameters
40W power rating
70V collector-emitter breakdown voltage
5A maximum collector current
10MHz transition frequency
40 minimum DC current gain
Quality and Safety Features
ROHS3 compliant
TO-220-3 package for thermal dissipation and reliability
Compatibility
Through-hole mounting compatible
Application Areas
Power amplifiers
Motor drivers
Switching regulators
Industrial control systems
Product Lifecycle
Current production part, no indication of discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose
Robust power and voltage handling capabilities
High current capacity for demanding applications
Suitable for high-frequency circuits
Proven quality and reliability in the TO-220-3 package
