Manufacturer Part Number
IRFM120A
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel MOSFET transistor designed for a wide range of power management and switching applications.
Product Features and Performance
Operating temperature range of -55°C to 150°C
100V drain-to-source voltage (Vdss)
Maximum gate-to-source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 200mOhm @ 1.15A, 10V
Continuous drain current (Id) of 2.3A at 25°C
Input capacitance (Ciss) of 480pF @ 25V
Maximum power dissipation of 2.4W at 25°C
Product Advantages
Excellent power handling capabilities
Low on-resistance for efficient power delivery
Wide operating temperature range
Robust design for reliable performance
Key Technical Parameters
MOSFET technology
N-Channel FET type
Vgs(th) of 4V @ 250A
Gate charge (Qg) of 22nC @ 10V
Quality and Safety Features
RoHS non-compliant
Suitable for high-temperature environments
Compatibility
Surface mount package (SOT-223-4, TO-261-4, TO-261AA)
Application Areas
Power management circuits
Switching applications
Motor drives
Industrial controls
Product Lifecycle
Current product offering, no discontinuation announced
Several Key Reasons to Choose This Product
High-performance power handling
Low on-resistance for efficient operation
Wide operating temperature range for versatility
Robust design for reliable performance in demanding applications