HUFA75645P3 - Fairchild Semiconductor

Manufacturer Part Number

HUFA75645P3

Manufacturer

Fairchild (onsemi)

Introduction

High-performance N-Channel UltraFET MOSFET transistor with low on-resistance and high current capability.

Product Features and Performance

Optimized for high-frequency and high-power applications

Low on-resistance (RDS(on)) of 14 mΩ @ 75A, 10V

Continuous drain current (ID) of 75A at 25°C case temperature

High drain-to-source voltage (VDSS) of 100V

Wide operating temperature range of -55°C to 175°C

Low input capacitance (Ciss) of 3790 pF @ 25V

Fast switching speed and low gate charge (Qg) of 238 nC @ 20V

Product Advantages

Excellent power efficiency and thermal performance

Compact and robust TO-220-3 package

Reliable and durable design for demanding applications

Suitable for high-frequency and high-power switching circuits

Key Technical Parameters

Drain-to-Source Voltage (VDSS): 100V

Gate-to-Source Voltage (VGSS): ±20V

On-Resistance (RDS(on)): 14 mΩ @ 75A, 10V

Continuous Drain Current (ID): 75A at 25°C case temperature

Input Capacitance (Ciss): 3790 pF @ 25V

Power Dissipation (PD): 310W at 25°C case temperature

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to the highest quality standards

Compatibility

Through-hole mounting in TO-220-3 package

Suitable for a wide range of high-power, high-frequency applications

Application Areas

Switching power supplies

Motor drives

Inverters

Servo amplifiers

Industrial and automotive power electronics

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement options or upgrades available if needed

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact and robust design for demanding applications

Reliable and durable performance across a wide temperature range

Suitable for high-frequency and high-power switching circuits

Compatibility with a wide range of power electronics applications