HUF75321P3 - Fairchild Semiconductor

Manufacturer Part Number

HUF75321P3

Manufacturer

Fairchild (onsemi)

Introduction

High-performance N-Channel MOSFET transistor

Product Features and Performance

Operates at high temperatures up to 175°C

Supports high drain-to-source voltage up to 55V

Extremely low on-resistance of 34mOhm at 10V gate drive

High continuous drain current up to 35A at 25°C

Fast switching with low input capacitance of 680pF

High power dissipation capability up to 93W

Product Advantages

Efficient power conversion with low conduction losses

Reliable high-temperature operation

Compact TO-220-3 package for space-saving designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 55V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 34mOhm @ 35A, 10V

Continuous Drain Current (Id): 35A @ 25°C

Input Capacitance (Ciss): 680pF @ 25V

Power Dissipation: 93W @ Tc

Quality and Safety Features

Robust metal-oxide-semiconductor (MOSFET) technology

Qualified for high-reliability applications

Complies with safety and environmental regulations

Compatibility

Suitable for a wide range of power electronics applications

Application Areas

Switching power supplies

Motor drives

Inverters and converters

Industrial and automotive electronics

Product Lifecycle

Currently in active production

No plans for discontinuation, long-term availability

Key Reasons to Choose This Product

Excellent efficiency and power density

Reliable high-temperature operation

Compact and space-saving package

Proven MOSFET technology for high performance

Suitable for a wide range of power electronics applications