Manufacturer Part Number
FQPF13N06
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Rds On (Max) @ Id, Vgs: 135mOhm @ 4.7A, 10V
Current Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Product Advantages
ROHS3 Compliant
Wide Operating Temperature Range: -55°C ~ 175°C (TJ)
Compact Through Hole Mounting
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: TO-220-3 Full Pack
Quality and Safety Features
Manufacturer's Packaging: TO-220F-3
Supplier Device Package: TO-220F-3
Compatibility
QFET Series
Application Areas
Suitable for a variety of power conversion and control applications
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose
Wide voltage and current ratings
Low on-resistance for efficient power handling
Compact through-hole package
Reliable performance across wide temperature range
ROHS3 compliance for environmental sustainability