Manufacturer Part Number
FQP4N20L
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel power MOSFET
Product Features and Performance
Suitable for high-voltage, high-current switching applications
Low on-resistance for efficient power conversion
Low gate charge for fast switching
High voltage capability up to 200V
Continuous drain current up to 3.8A at 25°C
Product Advantages
High efficiency due to low on-resistance
Fast switching speed
Reliable high-voltage operation
Compact TO-220-3 package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.35Ω @ 1.9A, 10V
Continuous Drain Current (Id): 3.8A @ 25°C
Input Capacitance (Ciss): 310pF @ 25V
Power Dissipation (Tc): 45W
Quality and Safety Features
Rugged MOSFET construction
Suitable for high-temperature operation up to 150°C
Compatibility
Widely compatible with various high-voltage, high-current applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
DC-DC converters
Industrial and consumer electronics
Product Lifecycle
Current production model, no indication of discontinuation
Replacements and upgrades available as technology advances
Key Reasons to Choose
Excellent efficiency and power handling capability
Fast switching performance for high-frequency applications
Reliable high-voltage operation
Compact and easy to integrate design
