Manufacturer Part Number
FQB11N40CTM
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Current Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Product Advantages
High voltage and current handling capability
Low on-resistance
Low gate charge for efficient switching
Key Technical Parameters
Manufacturer's packaging: D2PAK (TO-263)
Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Series: QFET
Package: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Quality and Safety Features
Robust package design for high power and temperature operation
Compatibility
Suitable for a wide range of power electronics and control applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current handling
Low on-resistance for efficient power conversion
Compact and robust package for high power and temperature applications
Suitable for a wide range of power electronics and control applications
FQB11N40CTM MOSFairchild (onsemi)