Manufacturer Part Number
FDT3N40TF
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel MOSFET transistor
Part of the UniFET series
Product Features and Performance
High drain-to-source breakdown voltage of 400V
Low on-resistance of 3.4Ω @ 1A, 10V
Continuous drain current of 2A at 25°C
Operating temperature range of -55°C to 150°C
Input capacitance of 225pF @ 25V
Power dissipation of 2W at 25°C
Product Advantages
Excellent voltage handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Compact surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 400V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 3.4Ω @ 1A, 10V
Drain Current (Id): 2A @ 25°C
Input Capacitance (Ciss): 225pF @ 25V
Power Dissipation (Ptot): 2W @ 25°C
Quality and Safety Features
Meets industrial-grade quality standards
Robust design for reliable performance
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Industrial and consumer electronics
Product Lifecycle
Currently available
Replacement or upgrade options may be available
Key Reasons to Choose
Excellent voltage handling and low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
Reliable performance and quality-focused design
FDT439N MOSFairchild (onsemi)