Manufacturer Part Number
FDS6699S
Manufacturer
Fairchild (onsemi)
Introduction
High-performance power MOSFET transistor for power supply and power conversion applications
Product Features and Performance
N-channel power MOSFET
Low RDS(on) of 3.6 mΩ @ 21 A, 10 V
High drain current capability of 21 A
Fast switching speed
High power dissipation of 2.5 W
Product Advantages
Excellent power efficiency
High reliability
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
Gate-to-Source Voltage (VGS): ±20 V
Threshold Voltage (VGS(th)): 3 V @ 1 mA
On-State Resistance (RDS(on)): 3.6 mΩ @ 21 A, 10 V
Input Capacitance (Ciss): 3610 pF @ 15 V
Gate Charge (Qg): 91 nC @ 10 V
Quality and Safety Features
Robust design for high reliability
Complies with industry safety standards
Compatibility
Compatible with a wide range of power supply and power conversion applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Inverters
Battery chargers
Product Lifecycle
The FDS6699S is an active product
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and reliable surface-mount package
Suitable for a wide range of power conversion applications
High reliability and safety features
FDS6694-NLAMI Semiconductor/onsemi