Manufacturer Part Number
FDS2170N3
Manufacturer
Fairchild (onsemi)
Introduction
The FDS2170N3 is a discrete N-channel MOSFET transistor from Fairchild (onsemi).
Product Features and Performance
Rated for 200V drain-source voltage
128mOhm maximum on-resistance at 3A, 10V
3A continuous drain current at 25°C
3W maximum power dissipation
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for efficient power switching
High voltage rating for a wide range of applications
Surface mount packaging for compact designs
Key Technical Parameters
Drain-source voltage (Vdss): 200V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 128mOhm @ 3A, 10V
Continuous drain current (Id): 3A @ 25°C
Input capacitance (Ciss): 1292pF @ 100V
Power dissipation (Pd): 3W @ 25°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount 8-SOIC (0.154", 3.90mm Width) package
Application Areas
Power switching in DC-DC converters
Motor drives
Lighting control
General purpose power electronics
Product Lifecycle
The FDS2170N3 is an active and available product from Fairchild (onsemi).
Key Reasons to Choose
Excellent performance-to-cost ratio
Robust and reliable design for long-term use
Proven track record in a wide range of power electronics applications
