Manufacturer Part Number
FDD120AN15A0
Manufacturer
Fairchild (onsemi)
Introduction
High-performance, high-power N-channel MOSFET transistor
Designed for switching and amplifier applications
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-Source Voltage (Vdss): 150V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 120mΩ @ 4A, 10V
Continuous Drain Current (Id): 2.8A (Ta), 14A (Tc)
Input Capacitance (Ciss): 770pF @ 25V
Power Dissipation (Tc): 65W
N-Channel MOSFET transistor
Product Advantages
Low on-state resistance for high efficiency
High voltage and current handling capability
Wide operating temperature range
Suitable for various switching and amplifier applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 120mΩ @ 4A, 10V
Continuous Drain Current (Id): 2.8A (Ta), 14A (Tc)
Input Capacitance (Ciss): 770pF @ 25V
Power Dissipation (Tc): 65W
Quality and Safety Features
Robust and reliable design
Complies with industry standards and safety requirements
Compatibility
Suitable for a wide range of switching and amplifier applications
Application Areas
Switching power supplies
Motor drives
Inverters
Class-D audio amplifiers
Industrial automation and control
Product Lifecycle
This product is currently in production and available for purchase
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state resistance for high efficiency
Wide operating temperature range
Reliable and robust design
Suitable for a variety of switching and amplifier applications
