Manufacturer Part Number
FDC5661N
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel MOSFET transistor for power management and control applications
Product Features and Performance
Low on-resistance for efficient power conversion
Fast switching for high-frequency operation
Low gate charge for efficient drive
Rugged design with high avalanche energy rating
Product Advantages
Optimized for high-frequency switching
Excellent thermal management
Robust and reliable performance
Key Technical Parameters
Vdss: 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Id (Continuous) @ 25°C: 4.3A
Ciss (Max) @ Vds: 763pF @ 25V
Power Dissipation (Max): 1.6W
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Quality and Safety Features
Robust design for high reliability
Compliance with industry safety standards
Compatibility
Compatible with a wide range of power management and control applications
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
High-frequency power conversion
Product Lifecycle
Currently in active production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance and efficiency in high-frequency switching applications
Robust and reliable design for long-term operation
Optimized for thermal management and power dissipation
Ease of use and compatibility with a wide range of applications