Manufacturer Part Number
IRFP450PBF
Manufacturer
Electro-Films (EFI) / Vishay
Introduction
High-performance N-channel power MOSFET with low on-resistance and high power density
Product Features and Performance
High drain to source voltage up to 500V
Low on-resistance of 400mOhm @ 8.4A, 10V
High continuous drain current up to 14A (Tc)
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 150nC @ 10V
MOSFET technology for high reliability and efficiency
Product Advantages
Suitable for high-power and high-voltage applications
Excellent thermal management and power dissipation
Robust and durable design for long-term use
Efficient power conversion and low energy losses
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 400mOhm @ 8.4A, 10V
Continuous Drain Current (Id): 14A (Tc)
Input Capacitance (Ciss): 2600pF @ 25V
Power Dissipation (Tc): 190W
Quality and Safety Features
RoHS3 compliant for environmental compliance
TO-247AC package for robust and reliable operation
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-power, high-voltage applications in industrial, automotive, and consumer electronics
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
High-voltage and high-current switching circuits
Product Lifecycle
This product is currently in production and actively supported by the manufacturer. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent performance with high voltage, current, and power handling capabilities
Low on-resistance for efficient power conversion and minimal energy losses
Wide operating temperature range for versatile applications
Robust and reliable design for long-term, continuous use
RoHS3 compliance for environmentally-friendly applications
Availability of technical support and product lifecycle management from the manufacturer