Manufacturer Part Number
BC818-25
Manufacturer
Diotec Semiconductor
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), NPN type
Product Features and Performance
Operating Temperature Range: -55°C to 150°C
Maximum Power Dissipation: 310 mW
Collector-Emitter Breakdown Voltage: 25 V
Collector Current (Max): 800 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 700 mV @ 50 mA, 500 mA
DC Current Gain (hFE): 160 minimum @ 100 mA, 1 V
Transition Frequency: 100 MHz
Product Advantages
Excellent high-frequency performance
High power capability
Wide operating temperature range
Reliable and stable operation
Key Technical Parameters
Transistor Type: NPN
Packaging: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of electronic circuit designs
Application Areas
Amplifiers
Switches
Drivers
Logic circuits
General-purpose electronics
Product Lifecycle
Current product, not nearing discontinuation
Readily available replacement or upgrade options
Key Reasons to Choose This Product
High-frequency performance for demanding applications
Robust power handling capability
Wide operating temperature range for reliable operation
Compact surface-mount packaging for efficient board layout
RoHS compliance for environmental responsibility
Proven reliability and stability in various electronic circuits