BC817-40 - Diotec Semiconductor

Manufacturer Part Number

BC817-40

Manufacturer

Diotec Semiconductor

Introduction

Bipolar Junction Transistor (BJT), NPN type

Product Features and Performance

Operating temperature range: -55°C to 150°C

Power rating: 310 mW

Collector-Emitter breakdown voltage: 45 V

Collector current (maximum): 800 mA

Collector cutoff current (maximum): 100 nA

Collector-Emitter saturation voltage: 700 mV @ 50 mA, 500 mA

DC current gain: 250 @ 100 mA, 1 V

Transition frequency: 100 MHz

Product Advantages

High power and current handling capability

Wide operating temperature range

Surface mount packaging for compact designs

Key Technical Parameters

Voltage: Collector-Emitter breakdown voltage (max) 45 V

Current: Collector current (max) 800 mA, Collector cutoff current (max) 100 nA

Power: 310 mW

Transistor type: NPN

DC current gain (min): 250 @ 100 mA, 1 V

Transition frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

General-purpose amplifier and switching applications

Power supply circuits

Audio and video equipment

Industrial automation and control systems

Product Lifecycle

The BC817-40 is an actively supported product in Diotec Semiconductor's portfolio.

Replacement or upgraded products may become available in the future as technology evolves.

Key Reasons to Choose This Product

High power and current handling capability

Wide operating temperature range

Reliable and durable performance

Compact surface mount packaging

Compatibility with a wide range of applications

Ongoing support and availability from the manufacturer