Manufacturer Part Number
BC817-16
Manufacturer
Diotec Semiconductor
Introduction
NPN bipolar junction transistor suitable for various general-purpose switching and amplifier applications.
Product Features and Performance
Operates in temperature range of -55°C to 150°C
Maximum collector current of 800 mA
Maximum collector-emitter breakdown voltage of 45 V
Typical transition frequency of 100 MHz
Minimum DC current gain (hFE) of 100 at 100 mA and 1 V
Product Advantages
Excellent thermal stability
Reliable performance in wide temperature range
Suitable for various switching and amplifier applications
Key Technical Parameters
Power dissipation: 310 mW
Collector-emitter breakdown voltage: 45 V
Collector current: 800 mA
Collector cutoff current: 100 nA
Collector-emitter saturation voltage: 700 mV @ 50 mA, 500 mA
Quality and Safety Features
RoHS3 compliant
Packaged in SOT-23-3 (TO-236) surface mount package
Compatibility
Suitable for various general-purpose switching and amplifier applications
Application Areas
Switching circuits
Amplifier circuits
General-purpose electronic applications
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Reliable performance in wide temperature range
High current and voltage handling capabilities
Compact surface mount packaging
RoHS3 compliance for environmental safety
Suitable for a wide range of switching and amplifier applications