Manufacturer Part Number
BC807-25
Manufacturer
Diotec Semiconductor
Introduction
Bipolar Junction Transistor (BJT), PNP type
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
Low collector-emitter saturation voltage: 700mV @ 50mA, 500mA
High current gain: 160 @ 100mA, 1V
High transition frequency: 100MHz
Low collector cutoff current: 100nA (ICBO)
Power rating: 310mW
Collector-emitter breakdown voltage: 45V
Maximum collector current: 800mA
Product Advantages
Suitable for a wide range of applications due to its versatile performance
Compact surface mount package for efficient board space utilization
Excellent electrical characteristics for reliable operation
Key Technical Parameters
Transistor Type: PNP Bipolar Junction Transistor
Package: SOT-23-3 (TO-236)
Operating Temperature Range: -55°C to 150°C
Power Rating: 310mW
Collector-Emitter Breakdown Voltage: 45V
Maximum Collector Current: 800mA
Current Gain (hFE): 160 @ 100mA, 1V
Transition Frequency: 100MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance in a wide range of operating conditions
Compatibility
Suitable for use in various electronic circuits and applications
Application Areas
Amplifiers
Switches
Logic gates
Power supplies
General-purpose electronic devices
Product Lifecycle
Current product offering, not nearing discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent electrical characteristics for reliable operation
Wide operating temperature range for versatile applications
Compact surface mount package for efficient board space utilization
RoHS3 compliance for environmental responsibility
Availability of replacement and upgrade options from the manufacturer