Manufacturer Part Number
ZXTN4004KTC
Manufacturer
Diodes Incorporated
Introduction
NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
Operating temperature range: -55°C to 150°C
Max power dissipation: 3.8W
Max collector-emitter breakdown voltage: 150V
Max collector current: 1A
Max collector cutoff current: 50nA
DC current gain (hFE): min 100 @ 150mA, 250mV
Surface mount package: TO-252-3 (D-Pak)
Product Advantages
Wide operating temperature range
High breakdown voltage
High current capability
High current gain
Surface mount package for compact designs
Key Technical Parameters
Transistor type: NPN
Package: TO-252-3 (D-Pak), 2 leads + tab
Packaging: Tape and reel
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with a wide range of electronic circuits and applications requiring a high-performance NPN bipolar junction transistor.
Application Areas
Power supplies, amplifiers, switches, and other electronic circuits requiring a high-voltage, high-current NPN transistor.
Product Lifecycle
Current product, no indication of discontinuation.
Replacement or upgrade options may be available from the manufacturer or authorized distributors.
Key Reasons to Choose
Wide operating temperature range
High breakdown voltage and current capability
High current gain for efficient operation
Surface mount package for compact designs
RoHS3 compliance for environmental safety
ZXTN5551FLTADiodes IncorporatedTRANS NPN 160V 0.6A SOT23-3
ZXTN4004ZTADiodes IncorporatedTRANS NPN 150V 1A SOT89
ZXTN617MATADiodes IncorporatedTRANS NPN 15V 4.5A DFN2020B-3
ZXTN4004ZETEX