ZXTN04120HFFTA - Diodes Incorporated

Manufacturer Part Number

ZXTN04120HFFTA

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-23F package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Rating: 1.5 W

Collector-Emitter Breakdown Voltage: 120 V

Collector Current (Max): 1 A

Collector Cutoff Current (Max): 10 A

Collector-Emitter Saturation Voltage: 1.5 V @ 5 mA, 2 A

Transistor Type: NPN Darlington

DC Current Gain (hFE): 3000 min @ 1 A, 5 V

Transition Frequency: 120 MHz

Surface Mount Packaging

Product Advantages

High power handling capability

High voltage and current ratings

Compact SOT-23F package

Suitable for a wide range of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 120 V

Collector Current (Max): 1 A

Collector Cutoff Current (Max): 10 A

DC Current Gain (hFE): 3000 min @ 1 A, 5 V

Transition Frequency: 120 MHz

Quality and Safety Features

RoHS3 Compliant

Suitable for high-temperature operations up to 150°C

Compatibility

Compatible with various electronic circuits and systems

Application Areas

Power supplies

Motor drives

Switching circuits

Amplifiers

Automotive electronics

Product Lifecycle

Current product

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High power handling capability

High voltage and current ratings

Compact and space-saving package

Suitable for a wide range of applications

Reliable performance and long lifespan