ZXMP3A16GTA - Diodes Incorporated

Manufacturer Part Number

ZXMP3A16GTA

Manufacturer

Diodes Incorporated

Introduction

The ZXMP3A16GTA is a P-channel MOSFET transistor from Diodes Incorporated, designed for a wide range of power management and switching applications.

Product Features and Performance

30V Drain-to-Source Voltage (Vdss)

±20V Gate-to-Source Voltage (Vgs)

45mOhm Maximum On-Resistance (Rds(on)) at 4.2A and 10V

4A Continuous Drain Current (Id) at 25°C

1022pF Maximum Input Capacitance (Ciss) at 15V

2W Maximum Power Dissipation (Ta)

Suitable for both low and high drive voltage applications (4.5V and 10V)

Product Advantages

Low on-resistance for improved efficiency

High current handling capability

Suitable for a wide range of temperatures (-55°C to 150°C)

Surface mount package for compact design

Key Technical Parameters

MOSFET technology

P-channel FET type

1V Maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 250A

6nC Maximum Gate Charge (Qg) at 10V

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with TO-261-4, TO-261AA, and SOT-223-3 package types

Application Areas

Power management

Switching circuits

Motor control

Battery charging and discharging

General power electronics applications

Product Lifecycle

The ZXMP3A16GTA is an active product, and Diodes Incorporated continues to manufacture and support it. Replacement or upgrade options may be available from Diodes Incorporated or other manufacturers, but the specific details should be verified with the manufacturer or a authorized distributor.

Several Key Reasons to Choose This Product

Low on-resistance for improved efficiency

High current handling capability

Wide operating temperature range

Suitable for both low and high drive voltage applications

Surface mount package for compact design

RoHS3 compliant for environmental responsibility