Manufacturer Part Number
ZXMP10A17E6TA
Manufacturer
Diodes Incorporated
Introduction
P-channel enhancement-mode MOSFET transistor
Suitable for power switching applications
Product Features and Performance
High drain-to-source breakdown voltage of 100V
Low on-resistance of 350mΩ at 1.4A, 10V
Fast switching speed
Low gate charge of 6.1nC at 5V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power switching
High reliability
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 1.3A at 25°C
On-Resistance (Rds(on)): 350mΩ at 1.4A, 10V
Input Capacitance (Ciss): 424pF at 50V
Power Dissipation (Pd): 1.1W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Surface-mount SOT-23-6 package
Application Areas
Power management
Switching applications
Battery-powered devices
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade options available
Key Reasons to Choose This Product
Efficient power switching performance
High reliability and long lifespan
Wide operating temperature range
Compact and surface-mountable package
RoHS compliance for environmentally-friendly use
ZXMP10A13FQTADiodes IncorporatedMOSFET P-CH 100V 600MA SOT23