Manufacturer Part Number
ZXMN6A09GTA
Manufacturer
Diodes Incorporated
Introduction
The ZXMN6A09GTA is a N-Channel power MOSFET transistor designed for a wide range of power conversion and power management applications.
Product Features and Performance
60V drain-to-source voltage rating
40mΩ maximum on-resistance at 8.2A drain current
4A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1407pF at 40V
Maximum power dissipation of 2W at 25°C
Product Advantages
Efficient power conversion due to low on-resistance
Reliable operation across wide temperature range
Compact surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 40mΩ @ 8.2A, 10V
Continuous Drain Current (Id): 5.4A @ 25°C
Input Capacitance (Ciss): 1407pF @ 40V
Power Dissipation (Ptot): 2W @ 25°C
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO certified facility
Compatibility
Surface mount SOT-223-3 package
Application Areas
Power conversion and management circuits
Motor control
Switching regulators
Battery chargers
Product Lifecycle
Still in active production
Replacements and upgrades available
Key Reasons to Choose
Efficient power handling due to low on-resistance
Reliable operation over wide temperature range
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-friendly applications
