ZXMN6A08E6TA - Diodes Incorporated

Manufacturer Part Number

ZXMN6A08E6TA

Manufacturer

Diodes Incorporated

Introduction

N-channel enhancement-mode MOSFET in a small SOT-26 package

Product Features and Performance

60V drain-source voltage (Vdss)

80mΩ maximum on-resistance (Rds(on))

8A continuous drain current (Id) at 25°C

459pF maximum input capacitance (Ciss)

1W maximum power dissipation (Pd) at 25°C

-55°C to 150°C operating temperature range

Product Advantages

Low on-resistance for efficient power switching

Small SOT-26 package for space-constrained designs

Wide operating temperature range

Key Technical Parameters

Drain-source voltage (Vdss): 60V

Gate-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 80mΩ @ 4.8A, 10V

Drain current (Id): 2.8A (Ta)

Input capacitance (Ciss): 459pF @ 40V

Power dissipation (Pd): 1.1W (Ta)

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Surface mount SOT-26 package

Compatible with standard MOSFET drivers and control circuits

Application Areas

Switching power supplies

Motor drives

Battery management systems

Industrial control and automation

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from Diodes Incorporated or other manufacturers.

Several Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Compact SOT-26 package for space-constrained designs

Wide operating temperature range for diverse applications

Reliable performance and quality assurance from Diodes Incorporated

Compatibility with standard MOSFET control and driver circuits